High doping incorporation on (311)B InP/InGaAs by metalorganic chemical vapor deposition and its application to tunnel junction fabrication
Identifieur interne : 00A495 ( Main/Repository ); précédent : 00A494; suivant : 00A496High doping incorporation on (311)B InP/InGaAs by metalorganic chemical vapor deposition and its application to tunnel junction fabrication
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Abstract
We investigated the doping characteristics of InP/InGaAs on the (311)B plane by metalorganic chemical vapor deposition using metalorganic group-V regents. For both n-type Si doping and p-type Zn doping, we found that dopant incorporation is higher on the (311)B plane than the (100) plane. Applying this result, we grew a tunnel junction on (311)B InP substrates at a constant growth temperature. The junction showed good current-voltage characteristics and is promising for device applications. © 2004 American Institute of Physics.
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Denbaars</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Californie</region></placeName><wicri:cityArea>Department of Electrical and Computer Engineering, University of California, Santa Barbara</wicri:cityArea></affiliation></author><author><name sortKey="Bowers, John E" uniqKey="Bowers J">John E. Bowers</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Californie</region></placeName><wicri:cityArea>Department of Electrical and Computer Engineering, University of California, Santa Barbara</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">04-0184221</idno><date when="2004-05-03">2004-05-03</date><idno type="stanalyst">PASCAL 04-0184221 AIP</idno><idno type="RBID">Pascal:04-0184221</idno><idno type="wicri:Area/Main/Corpus">00B986</idno><idno type="wicri:Area/Main/Repository">00A495</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Doping profiles</term><term>Experimental study</term><term>Gallium arsenides</term><term>Heavily doped semiconductors</term><term>III-V semiconductors</term><term>Indium compounds</term><term>MOCVD</term><term>Semiconductor doping</term><term>Semiconductor growth</term><term>Semiconductor thin films</term><term>Silicon</term><term>Zinc</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>6172V</term><term>8115G</term><term>6172S</term><term>Etude expérimentale</term><term>Indium composé</term><term>Semiconducteur fortement dopé</term><term>Gallium arséniure</term><term>Silicium</term><term>Zinc</term><term>Dopage semiconducteur</term><term>Semiconducteur III-V</term><term>Méthode MOCVD</term><term>Profil dopage</term><term>Croissance semiconducteur</term><term>Couche mince semiconductrice</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Zinc</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We investigated the doping characteristics of InP/InGaAs on the (311)B plane by metalorganic chemical vapor deposition using metalorganic group-V regents. For both n-type Si doping and p-type Zn doping, we found that dopant incorporation is higher on the (311)B plane than the (100) plane. Applying this result, we grew a tunnel junction on (311)B InP substrates at a constant growth temperature. The junction showed good current-voltage characteristics and is promising for device applications. © 2004 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0></fA01><fA02 i1="01"><s0>APPLAB</s0></fA02><fA03 i2="1"><s0>Appl. phys. lett.</s0></fA03><fA05><s2>84</s2></fA05><fA06><s2>18</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>High doping incorporation on (311)B InP/InGaAs by metalorganic chemical vapor deposition and its application to tunnel junction fabrication</s1></fA08><fA11 i1="01" i2="1"><s1>OKUNO (Yae L.)</s1></fA11><fA11 i1="02" i2="1"><s1>DENBAARS (Steven P.)</s1></fA11><fA11 i1="03" i2="1"><s1>BOWERS (John E.)</s1></fA11><fA14 i1="01"><s1>Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></fA14><fA20><s1>3483-3485</s1></fA20><fA21><s1>2004-05-03</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10020</s2></fA43><fA44><s0>8100</s0><s1>© 2004 American Institute of Physics. 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